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RB160L-90
Diodes
Schottky barrier diode
RB160L-90
Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
Features 1) Small power mold type. (PMDS) 2) Low IR 3) High reliability
2.0
4.50.2
1.20.3
4
4
0.10.02 0.1
5.00.3
PMDS
1.50.2 2.00.2
Structure
Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacture Date
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperatuer
Symbol VRM VR Io IFSM Tj Tstg (*1)Mounted on epoxy board.180Half sine wave
Electrical characteristic (Ta=25C) Parameter Symbol Min.
Limits 95 90 1 30 150 -40 to +150
5.30.1 0.05 9.50.1
Unit V V A A
Forward voltage Reverse current
VF IR
-
Typ. -
Max. 0.73 100
Unit V A
Conditions IF=1.0A VR=90V
120.2
4.2
1/3
RB160L-90
Diodes
Electrical characteristic curves
Ta=150 1 Ta=75 10000 Ta=125 1000 f=1MHz Ta=75 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125 0.1 Ta=150
Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
100
Ta=-25 0.01
Ta=-25
10
0.001 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
650
100
200
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
640
Ta=25 IF=1A n=30pcs
90 80 70 60 50 40 30 20 10 0
AVE:478.3nA :36.1612nA
Ta=25 Ta=25 VR=90V VR=100V n=30pcs n=30pcs
190 180 170 160 150 140 130 120 110 100
Ta=25 f=1MHz VR=0V n=10pcs
630 AVE:632.1mV 620
AVE:149.6pF
610
AVE:4.655uA
600 VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
30
100
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 150
25 20 15 10 5 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 8.3ms
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:7.40ns
Ifsm 8.3ms 8.3ms 1cyc 50
100
AVE:56.0A
50
0 IFSM DISRESION MAP
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
150 Ifsm t 100
1000
2
IM=10mA IF=0.5A
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a) 100
1ms time 300us
PEAK SURGE FORWARD CURRENT:IFSM(A)
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 1 Sin(180)
DC
10
Rth(j-c)
50
1
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2
2/3
RB160L-90
Diodes
1
3 2.5 0A 0V DC D=1/2 Sin(180) 0.5 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 90 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 Io VR D=t/T VR=45V Tj=150
3 2.5 2 1.5 1 Sin(180) 0.5 0 0
0A 0V
Io t T VR D=t/T VR=45V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.6 DC 0.4 Sin(180) 0.2
D=1/2
2 1.5 1
T
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.8
t
REVERSE POWER DISSIPATION:PR (W)
DC D=1/2
0
25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
150
30 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:1.70kV AVE:10.7kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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